Particle impact damage in silicon carbide.

Impact damage on silicon carbide : first results

This paper deals with the damage of ceramic materials after impact. The main information on the phenomenology and the kinetic damage are often localized inside the Hertzian cone crack area [I]. With a ceramic tile target, it is not possible to obtain any information during the test. Therefore a new geometry of ceramic target, called "Match was developed in order to put crack gauge inside the He...

Sub-Surface Damage Removal in Fabrication & Polishing of Silicon Carbide

Silicon Carbide (SiC) is emerging as a promising substrate for systems which leverage the low lattice mismatch with Gallium Nitride (GaN), high power density, heat dissipation and radiation hardness properties unique to this semiconductor. Wafer fabrication and polishing of SiC substrates poses processing issues as a result of the material’s high Mohs hardness (~9.25), and chemical inertness. P...

Silicon Nitride and Silicon Carbide

Boron carbide/n-silicon carbide heterojunction diodes

Silicon carbide microdisk resonator.

We demonstrate a silicon carbide (SiC) microdisk resonator with an intrinsic optical quality factor of 6.19×10(3), fabricated on the 3C-SiC-on-Si platform. We characterize the temperature dependence of the cavity resonance and obtain a thermo-optic coefficient of 2.92×10(-5)/K for 3C-SiC. Our simulations show that the device exhibits great potential for cavity optomechanical applications.